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We give the first report on the experimental investigation of a p-β-FeSi_2/n-4H-SiC heterojunction.A p-β-FeSi_2/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing(RTA).Sharp film-substrate interfaces were confirmed by scanning electron microscopy(SEM).The current density-voltage and photoresponse characteristics were measured.The measurements showed that the device exhibited good rectifying properties.The photocurrent density was about 1.82mA/cm~2 at a bias voltage of-1 V under illumination by a 5 mW,1.31μm laser,and the dark current density was approximately 0.537 mA/cm~2.The detectivity was estimated to be 8.8×10~9 cmHz~(1/2)/W at 1.31μm.All of the measurements were made at room temperature.The results suggest that the p-β-FeSi_2/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.
We give the first report on the experimental investigation of a p-β-FeSi_2 / n-4H-SiC heterojunction. A p -β-FeSi_2 / n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing (RTA). Sharp film-substrate interfaces were confirmed by scanning electron microscopy (SEM). The current density-voltage and photoresponse characteristics were measured. These measurements showed that the device exhibiting good rectifying properties. The photocurrent density was about 1.82 mA / cm ~ 2 at a bias voltage of-1 V under illumination by a 5 mW, 1.31 μm laser, and the dark current density was approximately 0.537 mA / cm ~ 2. The detectivity was estimated to be 8.8 × 10 ~ 9 cmHz ~ (1/2) / W at 1.31 μm. All of the measurements were made at room temperature. The results suggest that the p-β-FeSi_2 / n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.