论文部分内容阅读
多孔硅经来自２３Ｎａ的正电子束辐照后，其光荧光谱出现两个新特点：一是主峰峰位显著蓝移。由辐照前的红色光谱区蓝移到辐照后的绿色光谱区；二是出现一个较高能量的附加发光峰。红外吸收谱表明，正电子辐照有助于增强多孔硅的表面氧化。对多孔硅经正电子辐照后光荧光结构改变的机理进行了讨论
Porous silicon from the 23Na positron beam irradiation, the fluorescence spectrum showed two new features: First, the main peak of a significant blue shift. The red spectral region before irradiation is blue shifted to the irradiated green spectral region. The second is the appearance of an additional luminescence peak of higher energy. Infrared absorption spectra indicate that positron irradiation helps to enhance the surface oxidation of porous silicon. The mechanism of the change of fluorescence structure of porous silicon after positron irradiation was discussed