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引言纯的SnO_2是一个禁带宽度较大的n型半导体材料,其禁带宽度为3.7eV。由于它内部存在着点缺陷,这些点缺陷具有施主或受主的作用,而使它具有导电性。 SnO_2晶体属于四方晶系,具有金红石结构,其空间群为D_(4h)~(14)[P42/mnm],单位晶胞含有6个原子,2个Sn原子,4个O原子,如图1所示:每个Sn原子都位于正八面体顶角的氧原子的中心;而每个O原子也都被等边三角形顶角的三个锡原子所包围。例如:它以6:3配比,由Baur所测的晶格参数是a=b=4.737A,C=3.185A,c/a之比
Introduction Pure SnO 2 is a n-type semiconductor material with a large forbidden band width with a forbidden band width of 3.7 eV. Because of its internal point defects exist, these point defects have the role of donor or acceptor, making it conductive. The SnO 2 crystal belongs to the tetragonal system and has the rutile structure. The space group is D 4h 14 P 42 / mnm. The unit cell contains 6 atoms, 2 Sn atoms and 4 O atoms, as shown in Fig.1 : Each Sn atom is located at the center of the oxygen atom at the top of the octahedron and each O atom is also surrounded by three tin atoms at the vertex of the equilateral triangle. For example, it has a 6: 3 ratio and the lattice parameters measured by Baur are a = b = 4.737A, C = 3.185A, c / a ratio