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为了提高无机纳米发光材料的发光效率和有机-无机杂化电致发光器件的性能,使用有机金属前驱体法,制备了具有化学组分梯度的ZnCdS/CdxZn1-xSeyS1-y量子点量子阱材料以及CdxZn1-xSeyS1-y量子点材料。观察到相同反应温度与反应物配比所制得的ZnCdS/CdxZn1-xSeyS1-y光致发光峰相较于CdxZn1-xSeyS1-y出现明显的蓝移,且荧光量子效率有一定的提高,最高可达60.6%。通过在反应过程中调节Se与S的比例,观察到了反应产物的光致发光峰随Se比例的减少而逐渐蓝移。结果表明,与使用纯无机纳米材料作为有源层的器件相比,使用量子点量子阱材料制备的有机-无机杂化LED的电流效率提高了4.3倍。
In order to improve the luminescent efficiency of the inorganic nano luminescent materials and the performance of the organic-inorganic hybrid electroluminescent device, a ZnCdS / CdxZn1-xSeyS1-y quantum dot quantum well material with a chemical composition gradient was prepared by using the organometallic precursor method, and CdxZn1-xSeyS1-y quantum dot material. Compared with CdxZn1-xSeyS1-y, the blue-shifted ZnCdS / CdxZn1-xSeyS1-y photoluminescence peak obtained by the same reaction temperature and the ratio of the reactants showed a clear blue shift, and the fluorescence quantum efficiency increased to a certain extent, Up to 60.6%. By adjusting the ratio of Se to S during the reaction, it was observed that the photoluminescence peak of the reaction product gradually blues shifted with the decrease of the Se ratio. The results show that the current-efficiency of organic-inorganic hybrid LEDs fabricated using quantum dot quantum well materials is 4.3 times more efficient than devices using pure inorganic nanomaterials as the active layer.