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利用自行研制的超高真空化学气相沉积系统 ,在直径 3英寸的衬底硅片上生长了锗硅应变外延层 ,并进行了实时掺杂生长。利用双晶X射线衍射技术测试了外延层 ,确定外延层的组分与晶体质量 ,并利用二次离子质谱仪进行了纵向组分分布剖析 ,利用扩展电阻仪确定外延层的电学特性。研究了锗硅应变外延层的生长特性和材料特性 ,生长速率随锗组分的增加而降低 ,以氢气为载气的硼烷对锗硅合金的生长速率有促进作用。还通过生长锗组分渐变的缓冲层 ,改善了外延层的晶体质量
Using a self-developed ultra-high vacuum chemical vapor deposition system, a germanium-silicon strain epitaxial layer was grown on a 3-inch-diameter substrate silicon wafer and a real-time doping growth was performed. The epitaxial layer was tested by dual-crystal X-ray diffraction to determine the composition and crystal quality of the epitaxial layer. The longitudinal component distribution was analyzed by using secondary ion mass spectrometer. The electrical properties of the epitaxial layer were determined by the extended resistance meter. The growth characteristics and material properties of strain-epitaxial silicon germanium-silicon epitaxial layers are studied. The growth rate decreases with the increase of the germanium content. The borane with hydrogen as a carrier gas promotes the growth rate of the silicon germanium alloy. The crystal quality of the epitaxial layer is also improved by growing a graded buffer layer of germanium