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本文讨论了关于采用二氯硅烷淀积外延硅的新近研究。另外,介绍了应用二氯硅烷淀积多晶硅和氮化硅膜的情况。当淀积温度变化时,用二氯硅烷淀积硅膜的淀积速率变化很小。在高淀积速率以及比四氯化硅低100℃的温度下能生长结晶质量优良的均匀外延层。讨论了与其它硅烷相比二氯硅烷的经济优点。同时列出了有关物理性质和操作技术的内容。
This article discusses a recent study on the deposition of epitaxial silicon using dichlorosilane. In addition, a case where polycrystalline silicon and a silicon nitride film are deposited using dichlorosilane is described. When the deposition temperature changes, the deposition rate of the silicon film deposited with dichlorosilane varies little. A uniform epitaxial layer of good crystalline quality can be grown at a high deposition rate and at a temperature 100 ° C below that of silicon tetrachloride. The economic advantages of dichlorosilanes compared to other silanes are discussed. Also listed on the physical properties and operating techniques.