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采用自主研发的碱性铜布线抛光液,在300 mm化学机械平坦化平台上对铜镀膜去除速率一致性进行了实验研究,并对质量传递和速率一致性的关系进行了深入分析。研究结果表明,压力和流量变化对不同的抛光液影响不同。低压CMP下全局质量传递差较小,去除速率一致性好。随着压力的增大,铜的平均去除速率迅速增大;而压力的增大使晶圆中心和边缘处质量传递差增大,铜的去除速率差增大,导致去除速率一致性劣化。流量的增大利于提高全局去除速率一致性,并使全局质量传递加快,铜去除速率略有增大。该研究成果对提高300 mm铜布线片CMP全局平坦化,尤其是提高器件成品率和优品率有一定的指导意义。
The copper copper plating slurry developed by ourselves was used to study the consistency of the removal rate of copper coating on the 300 mm CMP platform. The relationship between mass transfer and rate consistency was also analyzed. The results show that pressure and flow changes have different effects on different polishing solutions. Low-pressure CMP global quality difference is small, good removal rate consistency. With the increase of pressure, the average removal rate of copper increased rapidly; while the increase of pressure increased the mass transfer difference between wafer center and edge, and the difference of copper removal rate increased, resulting in the deterioration of the consistency of removal rate. The increase of traffic is conducive to improving the consistency of the global removal rate and accelerating the global quality transfer, with a slight increase of copper removal rate. The research results have certain guiding significance for improving CMP global planarization of 300 mm copper wiring board, especially for improving device yield and excellent product rate.