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以InGaAs/GaAs应变量子阱材料为例,介绍了考虑能带及波函数的混合效应的6×6Luttinger-Kohn哈密顿量,提出用有限差分法求解含Luttinger-Kohn哈密顿量的有效质量方程,数值模拟得到导带和价带的能带结构,计算应变量子阱的跃迁矩阵元,进而用Lorentzian线形函数计算材料增益。讨论了量子阱阱宽、注入载流子浓度、温度等因素对量子阱材料增益的影响。计算结果表明,压应变使得量子阱有效带隙增大,降低了材料增益的透明电流密度,继而降低器件的阈值,改善器件的输出特性;增益峰值波长和发射波长之间合适的偏差,会使光抽运半导体激光器的阈值电流和工作电流随温度有较小的变化。
Taking InGaAs / GaAs strain quantum well material as an example, the 6 × 6 Luttinger-Kohn Hamiltonian considering the mixing effect of energy band and wave function is introduced. The effective mass equation for Luttinger-Kohn Hamiltonian is proposed by finite difference method. The band structure of the conduction band and the valence band was obtained by numerical simulation. The transition matrix elements of the strain quantum well were calculated, and then the material gain was calculated by Lorentzian linear function. The effects of quantum well width, injected carrier concentration and temperature on the gain of quantum well materials are discussed. The calculated results show that the compressive strain increases the effective bandgap of the quantum well, reduces the transparent current density of the material gain, and then reduces the threshold of the device to improve the output characteristics of the device. The appropriate deviation between the gain peak wavelength and the emission wavelength will make Optical pumping semiconductor lasers threshold current and operating current with the temperature has a smaller change.