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单晶硅最早是用切克劳斯基方法制备的。功率器件对高电阻率硅的需要,要求发展无坩埚区熔提纯技术。由气相沉积法得到的多晶棒经区熔提纯制得高纯晶体,同时一些更新的技术正在降低其成本使可与切克劳斯基法相比。由气相沉积制备单晶棒是另一种低成本的方法。
Monocrystalline silicon was first prepared by the Czochralski method. The need for high-resistivity silicon for power devices requires the development of crucibleless melting techniques. Polycrystalline rods obtained by vapor deposition are refined by zone melting to produce high purity crystals, while some of the newer technologies are reducing their costs to comparable Czochralski methods. The production of single crystal rods by vapor deposition is another low-cost method.