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1.前言近几年来在半导体制造业中使用离子注入工艺已显著增加。这一迅速增长的主要因素是在注入工艺中采用光刻胶作掩蔽。最大分辨率是由正胶,即光刻时暴露在其中的部分显影时被去掉的那种胶取得的。通常,正胶对于温度相当敏感,在注入中过高的温度会使光刻胶产生气泡,改变临界尺寸并在其后工艺中使胶难以去除。大多数光刻胶在100℃以下不受影响。注入时几乎没有什么正胶能经得起150℃以上的温度。
1. Introduction The use of ion implantation processes in the semiconductor manufacturing industry has increased significantly in recent years. The main reason for this rapid growth is the use of photoresist as a mask in the implantation process. The maximum resolution is obtained from the positive glue, the glue that is removed as part of the development exposed during lithography. Normally, the positive resist is quite temperature-sensitive, too high a temperature during injection can cause bubbles in the resist, change the critical dimension, and make it difficult to remove the paste in a later process. Most photoresists are unaffected below 100 ° C. There is almost no positive plastic injection can withstand the temperature above 150 ℃.