Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc

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ZrN/TiZrN multilayers are deposited by using the cathodic vacuum arc method with different substrate bias(from 0 to 800 V),using Ti and Zr plasma flows in residual N 2 atmosphere,combined with ion bombardment of sample surfaces.The effect of pulsed bias on the structure and properties of films is investigated.Microstructure of the coating is analyzed by X-ray diffraction(XRD),and scanning electron microscopy(SEM).In addition,nanohardness,Young’s modulus,and scratch tests are performed.The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases.Solid solutions are formed for component TiZrN films.The dominant preferred orientation of TiZrN films is(111) and(220).At a pulsed bias of 200 V,the nanohardness and the adhesion strength of the ZrN/TiZrN multilayer reach a maximum of 38 GPa,and 78 N,respectively.The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions. ZrN / TiZrN multilayers are deposited by using the cathodic vacuum arc method with different substrate bias (from 0 to 800 V), using Ti and Zr plasma flows in residual N2 atmosphere, combined with ion bombardment of sample surfaces. The effect of pulsed bias on the structure and properties of films is investigated. Microstructure of the coating is analyzed by X-ray diffraction (XRD), and scanning electron microscopy (SEM) .In addition, nanohardness, Young’s modulus, and scratch tests are performed. show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases. Solid solutions are formed for component TiZrN films. The dominant preferred orientation of TiZrN films is (111) and (220). At a pulsed bias of 200 V, the nanohardness and the adhesion strength of the ZrN / TiZrN multilayer reach a maximum of 38 GPa, and 78 N, respectively. The ZrN / TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalence lent conditions.
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