Graphene field effect transistor-based terahertz modulator with small operating voltage and low inse

• 作 者: 刘竞博 李萍剑 陈远富 宋欣波 戚飞 郑斌杰 贺加瑞 文岐业 张万里
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
• 出 处: Chinese Optics Letters
• 发表日期: 2016年05期
• 关键词: modulator terahertz transistor dielectric insertion attributed modulated instead

In this work,we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.

In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by the fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~ 20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.