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在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2nm厚的N,N-bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl)-1,4,5,8-naphthalenetetracarboxylicdiimide(NTCDI-C8F)和N,N′-dioctyl-3,4,9,10-perylenedicarboximide(PTCDI-C8)层后,器件的阈值电压由-19.4V显著降低到-1.8和-8.7V、迁移率提高了约2倍、电流开关比保持在105~106。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。
The insertion of an n-type organic semiconductor layer between the gold electrode and the p-type pentacene active layer significantly improves the performance of the pentacene thin film field effect transistor. After inserting 2 nm thick N, N-bis (2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl) -1,4,5, After the layers of 8-naphthalenetetracarboxylicdiimide (NTCDI-C8F) and N, N’-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8), the threshold voltage of the device decreased significantly from -19.4V to -1.8 and -8.7V , The mobility increased by about 2 times, the current switching ratio maintained at 105 ~ 106. This provides an idea for constructing an organic thin film field-effect transistor device having low threshold voltage and high mobility characteristics by simply introducing a thin layer of other organic semiconductor between the electrode and the organic semiconductor active layer.