Electroluminescence quenching mechanism in Rubrene doped host-guest system

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In this paper,the electroluminescence quenching mechanism in a 5,6,11,12-tetraphenylnaphthacene(Rubrene) doped host-guest system is studied by utilizing a specially designed organic light-emitting diode with an emission layer consisting of a few periodic host/guest structures.Tris-(8-hydroxyquinoline) aluminium(Alq 3) and Rubrene are used as the host and the guest,respectively.The thickness variation of the guest layer in each period enables the study of the effect of molecule aggregation,and the thickness variation of the host layer suggests a long range quenching mechanism of dipole-dipole interaction.The long range quenching mechanism is a Fo¨rster process,and the F¨orster radius of Rubrene is between 3 and 10 nm. In this paper, the electroluminescence quenching mechanism in a 5,6,11,12-tetraphenylnaphthacene (Rubrene) doped host-guest system is studied by utilizing specially designed organic light-emitting diode with an emission layer consisting of a few periodic host / guest structures.Tris- (8-hydroxyquinoline) aluminum (Alq 3) and Rubrene are used as the host and the guest, respectively. The thickness variation of the guest layer in each period enables the study of the effect of molecule aggregation, and the thickness variation of the host layer suggests a long range quenching mechanism of dipole-dipole interaction. The long range quenching mechanism is a Fohrrster process, and the Förster radius of Rubrene is between 3 and 10 nm.
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