Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) su

• 作 者: 吴玉新 朱建军 陈贵锋 张书明 江德生 刘宗顺 赵德刚 王辉 王玉田 杨辉
• 机 构: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of S
• 出 处: Chinese Physics B
• 发表日期: 2010年03期
• 关键词: AlGaN interlayer compressive vapour subsequent MOCVD dislocation strained tensil

We present the growth of GaN epilayer on Si(111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition.The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy,atomic force microscopy,optical microscopy and high-resolution x-ray diffraction.It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer,which can introduce a more compressive strain into the subsequent grown GaN layer,and reduce the crack density and threading dislocation density in GaN film.

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapor deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.