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英国BT & D Technologies公司宣称:他们做出了第一只封装半导体光放大器。该放大器工作在1530nm频带时,其光纤对光纤的增益大于20dB。目前,为了在实际上获得光纤对波导的有效的光耦合,稳定的封装技术已经成为主要的技术难题。InGaAsP放大器是用金属有机汽相外延技术(激光器生产中亦用该技术)制作的。1990年日本创造的封装放大器增益的前世界纪录为18dB。此外,该公司还改进了半导体基片的结构,以使它对偏振敏感度低,此项工作集中于1300nm波段,这是由于掺铒光纤放大器已足以供1500nm波段应用之故。据该公司产品研究的技术经理John Mellis声称:“我们的改进工作包括一个大的光腔基片的设计,以使水平方向和垂直方向的光波的界限均等一致。我们
British BT & D Technologies claims: they made the first package of semiconductor optical amplifiers. The amplifier work in the 1530nm band, the optical fiber gain of more than 20dB of fiber. At present, stable package technology has become a major technical challenge in order to effectively obtain optical fiber-to-waveguide optical coupling. InGaAsP amplifiers are fabricated using metal-organic vapor phase epitaxy (a technique also used in laser manufacturing). The world record for package amplifiers created in Japan in 1990 was 18dB. In addition, the company has also improved the structure of the semiconductor substrate to make it less sensitive to polarization, focusing on the 1300 nm band due to the fact that erbium-doped fiber amplifiers are sufficient for the 1500 nm band. According to John Mellis, technical manager of product research at the company, "Our refinements include the design of a large cavity substrate to equalize the boundaries between horizontal and vertical light waves.