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本文所介绍的采用氧化钡——二氧化钛系列陶瓷介质谐振器来稳频的GaAsFET(砷化镓场效应晶体管)集成振荡器,向人们提供了小型低噪声微波功率源。最近研制的陶瓷其膨胀系数与介电常数的温度系数相互补偿,因而谐振频率的温度系数很小。在6千兆赫时可获得输出为100毫瓦、效率为17％、频率温度系数小到2.3ppm/℃的振荡器。由于稳定,调频噪声电平还可减小30分贝。作者对振荡器和介质谐振器的动态特性作了精确测量,以决定等效电路表达式;提出了建立在这些等效电路表达式基础上的大信号设计理论,以求得振荡器与稳定介质谐振器之间的最佳耦合条件。本稳定振荡器的性能足以满足微波通信系统的需要
The GaAsFET (GaAs Field Effect Transistor) integrated oscillator, which is stabilized by a barium-titania ceramic dielectric resonator, is introduced in this paper to provide a small, low-noise microwave power source. The recent development of ceramic expansion coefficient and the dielectric constant of the temperature coefficient of mutual compensation, so the resonant frequency of the temperature coefficient is small. At 6 GHz, an oscillator with 100 milliwatts of output, 17% efficiency, and a frequency-temperature coefficient of as little as 2.3 ppm / ° C is available. Due to the stability, FM noise level can be reduced by 30 dB. The authors made an accurate measurement of the dynamic characteristics of oscillators and dielectric resonators to determine the equivalent circuit expressions and proposed a large signal design theory based on these equivalent circuit expressions to find the oscillator and the stable medium Optimal coupling conditions between resonators. The performance of this stable oscillator is sufficient to meet the needs of microwave communication systems