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提出的大容量绝缘栅双极型晶体管（ＩＧＢＴ）器件的驱动和快速保护方法能满足各种容量的ＩＧＢＴ器件和功率场效应晶体管（ＭＯＳＦＥＴ）器件对驱动和短路保护的要求。介绍了驱动电路和快速保护电路的原理，及保护电路响应时间的测量方法。给出了在不同基准电压下，模拟不同退饱和的集射电压下的保护响应时间。短路试验证明了保护电路的快速性。此驱动保护电路已用于由５０Ａ／６００Ｖ ＩＧＢＴ模块构成的逆变器和由４００Ａ／６００Ｖ ＩＧＢＴ模块构成的直流斩波器。工业运行结果表明保护方法响应时间快，抗干扰能力强。
The proposed method of driving and fast protection of large-capacity IGBT devices can satisfy the drive and short-circuit protection requirements of IGBT devices and power MOSFET devices of various capacities. The principle of driving circuit and fast protection circuit is introduced, and the measurement method of protection circuit response time is introduced. The protection response time under different emission voltages under different reference voltages is simulated. Short-circuit test proved the rapidity of the protection circuit. This drive protection circuit has been used for inverters consisting of 50A / 600V IGBT modules and DC choppers consisting of 400A / 600V IGBT modules. Industrial operation results show that the protection method response time, anti-interference ability.