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激光清洗微电子器件制造中最令人头痛的是有机物和微粒污染。对于亚微米尺度的半导体器件来说,其失效缺陷是微粒污染造成的。加工中,灰尘直径只及器件最小几何尺寸的1/3至1/10就能造成器件失效。传统的超声清洗和强声清洗对微米级及更小尺寸的微粒越来越无能为力了。目前正在研究开发以下几种激光清面:①微粒或表面吸收激光能量后,热扩散产生的力使微粒离开表面;②激光能量被微粒周围和下面的转移介质(例如,少量的水)吸收,导致介质爆炸性汽化,把微粒推离材料表面;③激光能量被基体材料吸收,然后把吸附的转移介质加热,产生爆炸性汽化。初步试验表明,这些激光辅助去除微粒(LAPR)的方法是有效的,使半导体器件生产成品率的提高有了光明的前景。上述清洗方法同样适用于要求特别严格的光学器件表面。
The most troubling part of laser-cleaning microelectronic devices is organic and particulate contamination. For sub-micron-scale semiconductor devices, the failure is caused by particulate pollution. Processing, the dust diameter and the smallest geometrical dimensions of the device only 1/3 to 1/10 can cause device failure. The traditional ultrasonic cleaning and strong sound cleaning on the micron size and smaller particles become increasingly powerless. Currently, several laser surfaces are being studied and developed as follows: ① After the particles or the surface absorb the laser energy, the force generated by the thermal diffusion leaves the surface off the surface; ② The laser energy is absorbed by the transfer medium (for example, a small amount of water) Resulting in explosive vaporization medium, the particles pushed away from the surface of the material; ③ laser energy is absorbed by the matrix material, and then adsorbed transfer medium heating, resulting in explosive vaporization. Preliminary experiments show that these laser assisted particle removal (LAPR) method is effective, so that the yield of semiconductor devices to improve the yield has a bright future. The above cleaning method is also applicable to the surface of the optical device that is required to be particularly strict.