论文部分内容阅读
对FinFET器件(或称三栅MOSFET器件)的二维截面做了解析静电学分析以得出阈电压的计算公式.结果显示,由于三栅结构在高度方向的限制作用,需要引入一个H系数来修正栅电容,随着高度不断变大,它渐近于双栅MOSFET器件的情况.由该解析模型得出的电势分布与数值模拟结果吻合.提出了一个包含量子效应的Fin FET器件的集约阈电压模型,结果表明,当高度或者顶栅的氧化层厚度变小时,栅电容及阈电压都会上升,这与FinFET设计时发现的趋势是相符合的.
An analytical electrostatic analysis of the two-dimensional cross-section of a FinFET device (or tri-gate MOSFET device) is performed to derive a threshold voltage calculation formula. The results show that due to the limitation of the tri-gate structure in the height direction, an H coefficient The gate capacitance is corrected, and as the height increases, it is asymptotically close to that of the dual-gate MOSFET device. The potential distribution obtained by this analytical model agrees well with the numerical simulation results. An intensive threshold of a FinFET device containing quantum effects Voltage model. The results show that both the gate capacitance and the threshold voltage increase when the height or thickness of the top gate oxide becomes smaller, which is consistent with the trend found in the FinFET design.