Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to back

• 作 者: 蒋华平 张波 刘闯 陈万军 饶祖刚 董彬
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Scien
• 出 处: 半导体学报
• 发表日期: 2012年02期
• 关键词: anode breakdown bipolar wafer dosage Wafer insulated transistor resistivity drif

The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by aμ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that anode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.

The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capability of the experiments and the theoretical breakdown model in paper The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This time, Wafer lifetimes are measured by aμ-PCD method, and well designed NPT-IGBTs with a final wafer thickness of 500 μm are fabricated. indicates that an anode injection efficiency reduction must be considered as the experimental model.