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一、引言 本所研制的砷化镓场效应管微波宽带混合集成放大器(4～8GHz、8～12GHz)为平衡式结构,制作微带线所用的99％氧化铝陶瓷基片尺寸是9.6×20mm、5×10mm。负载电阻是用厚度只有0.3mm的99％氧化
I. INTRODUCTION The GaAs FET microwave broadband hybrid integrated amplifier (4 ~ 8GHz, 8 ~ 12GHz) developed by our institute is a balanced structure. The size of the 99% alumina ceramic substrate used to make the microstrip line is 9.6 × 20mm , 5 × 10 mm. Load resistance is the thickness of only 0.3mm of 99% oxidation