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本文包括三个方面:(一)比较了用剥层椭偏光法和背散射法测得的注P~+硅中的损伤分布.实验结果表明,当注入剂量为5×10~(14)/厘米~2、10~(15)/厘米~2及10~(10)/厘米~2时,注入区形成了不同厚度的非晶层,且由椭偏光法测得的非晶层厚度及分布区域与由背散射沟道分析法测得的符合很好;在注入剂量为2×10~(14)/厘米~2的较低剂量时,未形成非晶层,从椭偏光法测得的损伤峰位置亦与背散射法所得结果一致.(二)用椭偏光法研究了注As~+硅表面层的离子注入增强腐蚀效应.文中提出了一种较精确地测量注入层腐蚀厚度的方法,并测得注As~+(剂量为10~(15)/厘米~2)的硅注入层在温度为43℃到45℃的23%稀释HF酸中增强腐蚀速率为6.5埃/分到22埃/分.(三)用椭偏光法研究了注入10~(15)/厘米~2As~+的硅在500℃下的热退火过程.实验证实了离子注入引起的非晶层在热退火时发生固相外延.用剥层椭偏光法测量经过热退火后的注入区,发现△和ψ值都较正常硅的低,ψ最低可达9.2°,其原因还有待进一步研究.
This paper consists of three aspects: (1) The damage distribution in P ~ + silicon injected by pellicle ellipsometry and backscattering is compared.The experimental results show that when the implantation dose is 5 × 10-14 / Cm ~ 2, 10 ~ (15) / cm ~ 2 and 10 ~ (10) / cm ~ 2, the thickness and distribution of amorphous layer were determined by ellipsometry The region was in good agreement with the backscatter channel analysis; at the lower dose of 2 × 10-14 / cm2, no amorphous layer was observed, as measured by ellipsometry The location of the damage peak is also consistent with the results obtained by the backscattering method. (2) The effect of ion implantation on the As <+> silicon surface layer is studied by ellipsometry to improve the corrosion effect. A more accurate method of measuring the thickness of the implanted layer is proposed , And the injection rate of As = + (at a dose of 10-15 / cm2) was measured at a rate of 6.5 A / min to 22 for a 23% diluted HF acid at a temperature of 43 ° C to 45 ° C (3) The ellipsometry was used to study the thermal annealing process of Si at 10 ~ (15) / cm ~ 2As ~ + at 500 ℃ .It was proved that the amorphous layer caused by ion implantation during thermal annealing Solid phase epitaxy occurs Measurement of the implanted region after the thermal annealing, and found △ ψ values are lower than normal silicon, up to the minimum ψ 9.2 °, the reason for further study.