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本文中研究了O~+(200keV,1.8 ×10~(18)cm~(-2))和 N~+(180keV,4 ×10~(17)cm~(-2))共注入Si形成 SOI(Silicon on Insulator)结构的界面及埋层的微观结构.俄歇能谱(AES)和光电子能谱(XPS)的测量和研究结果表明:O~+和N~+共注入的SOI结构在经1200℃,2h退火后,O~+和N~+共注入所形成的绝缘埋层是由SiO_2相和不饱和氧化硅态组成;在氧化硅埋层的两侧形成氮氧化硅薄层;表面硅-埋层的界面和埋层-体硅的界面的化学结构无明显差异.这些结果与红外吸收和离子背散射谱的分析结果相一致.对这种SOI结构界面与埋层的形成特征进行了分析讨论。
In this paper, the formation of SOI by co-implanting Si with O ~ + (200keV, 1.8 × 10 ~ (18) cm ~ (-2)) and N ~ + (180keV, 4 × 10 ~ (17) cm ~ (Silicon on Insulator) interface and the microstructure of the buried layer.The measurement and research results of Auger energy spectrum (AES) and photoelectron spectroscopy (XPS) show that the structure of SOI with O ~ + and N ~ + co- After annealing at 1200 ℃ for 2h, the buried insulating layer formed by O ~ + and N ~ + co-implantation is composed of SiO_2 phase and unsaturated silicon oxide state. A thin layer of silicon oxynitride is formed on both sides of the buried silicon oxide layer. The chemical structure of the interface between the silicon-buried layer and the buried layer-bulk silicon has no significant difference.These results are in agreement with the results of the infrared absorption and ion backscattering spectra.The formation characteristics of the SOI structure interface and buried layer Analysis and discussion.