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本文采用双石英反应管,硬接管路外延反应系统研究了GaP/GaP红色多片外延生产问题。通过正交试验,单项试验得到了多片外延生长最佳条件:n型外延过程中掺Te量为0.008mol%;p型外延过程中掺Ga_2O_3量为0.8mol%。用本试验得到的大量外延片,对每一片外延片都制成结面积为300×300μm~2台面二极管的芯片,把芯片采用压焊技术装在T018管壳上。测得芯片光强的平均位为0.55mcd/10mA,而最大值为0.8mcd/10mA。制得的φ5红色发光二极管光强平均值为2mcd/10mA。已得到批量外延片,发光效率为2—3%。
In this paper, double quartz reaction tube, hard-pipe epitaxial reaction system to study the GaP / GaP red multi-chip epitaxial production problems. Through orthogonal experiment, the optimal conditions for multi-piece epitaxial growth were obtained in a single experiment: the amount of Te doped in the n-type epitaxial process was 0.008 mol%; the amount of Ga_2O_3 doped in the p-type epitaxial process was 0.8 mol%. Using a large number of epitaxial wafers obtained in this experiment, a chip with an area of 300 × 300 μm ~ 2 mesa diodes was fabricated for each epitaxial wafer, and the chip was mounted on a T018 package by using a press-bonding technique. The average chip brightness measured 0.55mcd / 10mA, while the maximum value of 0.8mcd / 10mA. The resulting φ5 red light-emitting diode light intensity average of 2mcd / 10mA. Have been bulk epitaxial wafers, luminous efficiency of 2-3%.