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利用ANSYS软件模拟电子束退火MgB_2薄膜过程的温度场分布,退火样品与样品台之间的接触热阻对退火温度影响很大,且此接触热阻会随退火参数(电子束能量和退火时间)发生变化,这给模拟工作带来很大困难。本文先通过热阻串联对样品进行等效简化,再利用热传导近似计算把接触热阻的效应等效在样品模型中,并将接触热阻随退火参数的变化转化为电子束能量转化效率的变化,得到修正后的热源模型,仿真所得温度值与实测温度值基本相符,这为电子束退火制备薄膜材料的研究提供了温度参考。
Using ANSYS software to simulate the temperature field distribution of electron beam annealed MgB_2 film, the contact resistance between the annealed sample and the sample stage has a great influence on the annealing temperature. The contact thermal resistance varies with annealing parameters (electron beam energy and annealing time) Changes have caused great difficulties in simulation work. In this paper, the equivalent series of samples were simplified by thermal resistance series. The thermal conductivity approximation was used to calculate the effect of contact thermal resistance in the sample model, and the change of contact thermal resistance with annealing parameters was transformed into the change of electron beam energy conversion efficiency , The corrected heat source model is obtained, and the simulated temperature value is in good agreement with the measured temperature value, which provides a temperature reference for the research of thin film materials prepared by electron beam annealing.