论文部分内容阅读
,Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confine
【机 构】
：
Shenzhen Graduate School, Peking University, Shenzhen 518055, China“,”Institute of Microelectronics,
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2014年10期
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