论文部分内容阅读
,Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric
【机 构】
：
Department of Physics and Electronic Science, Weifang University, Weifang 261061, China“,”Key Labora
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2013年11期
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