,Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambi

• 作 者: Hui-Fang Xu Jian Cui Wen Sun Xin-Feng Han
• 机 构: Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyan
• 出 处: 中国物理B（英文版）
• 发表日期: 2019年10期
• 关键词: non-uniform gate-oxide layer ambipolar current radio-frequency performances tunn

A tunnel field-effect transistor (TFET) is proposed by combining various advantages together,such as non-uniform gate-oxide layer,hetero-gate-dielectric (HGD),and dual-material control-gate (DMCG) technology.The effects of the length of non-uniform gate-oxide layer and dual-material control-gate on the on-state,off-state,and ambipolar currents are investigated.In addition,radio-frequency performance is studied in terms of gain bandwidth product,cut-off frequency,transit time,and transconductance frequency product.Moreover,the length of non-uniform gate-oxide layer and dualmaterial control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current.All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET,which makes the proposed device a better application prospect in the advanced integrated circuits.