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最近半导体的激光退火新工艺研究正在蓬勃地进行着。所谓激光退火,就是使受了离子注入等损伤、表面晶格产生了缺陷的半导体恢复成结晶性好的半导体,它不是用已往那种热退火方式,而是用激光照射的方式退火。这种方法开始试验的是苏联,其次认真研究的是美国,最近在我国(日本)也广泛地开展了这项新技术的研究工作。退火的对象不单单是离子注入的半导体,而且对在低温基片上经过真空蒸镀生成晶格尺寸与基片晶格尺寸不匹配的薄膜也进行了激光退火的试验。
Recent semiconductor laser annealing new technology research is flourishing. The so-called laser annealing, is to make by the ion implantation damage, the surface lattice defects of the semiconductor recovery into a good crystalline semiconductor, it is not the kind of thermal annealing method used in the past, but by laser irradiation annealing. The Soviet Union was started with this method and the second was the United States. The research on this new technology was also widely carried out in our country (Japan) recently. The object of annealing is not only ion-implanted semiconductors, but laser annealing is also performed on a thin film that is formed on a cryogenic substrate by vacuum evaporation to produce a lattice size mismatch with the lattice size of the substrate.