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利用ＧａＡｓ 衬底上的ＩｎＡｓ薄膜制备的Ｈａｌｌ器件，具有灵敏度高（在相同的电子浓度、室温附近灵敏度是ＧａＡｓ Ｈａｌｌ器件的１．５ 倍），不等位电压温漂小等优点．可用于电流传感器、无刷电机等磁敏传感器中，具有广阔的应用前景
Hall devices fabricated using InAs films on GaAs substrates have the advantages of high sensitivity (1.5 times the sensitivity near GaAs Hall devices at the same electron concentration) and low temperature drift of the in-phase voltage. Can be used in current sensors, brushless motors and other magnetic sensors, has a broad application prospects