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采用铕离子注入热生长ＳｉＯ２ 薄膜的方法，获得掺杂剂量为１０１４ｃｍ － ２及１０１５ｃｍ － ２的ＳｉＯ２∶Ｅｕ３＋ 硅基复合膜，研究了该薄膜的光致发光退火特性．经１０００℃退火后观察到Ｅｕ３＋ 的红光发射．在１２００℃下氮气中退火观察到Ｅｕ２＋ ４５０ｎｍ 的强光发射．讨论了Ｅｕ３＋ 向Ｅｕ２＋ 的转变
The SiO2: Eu3 + silicon - based composite films with doping amount of 1014cm - 2 and 1015cm - 2 were obtained by the implantation of Eu3 + ions into the thermally grown SiO2 films. The photoluminescence annealing properties of the films were studied. Eu3 + red emission was observed after annealing at 1000 ° C. The strong light emission of Eu2 + 450 nm was observed by annealing in nitrogen at 1200 ° C. The transition of Eu3 + to Eu2 + is discussed