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成功地用深能级瞬态谱（ＤＬＴＳ）研究了ＩｎＡｓ自组织生长的量子点电学性质，获得２．５原子层ＩｎＡｓ量子点电子基态能级在ＧａＡｓ导带底下约０．１３ｅＶ，该量子点在荷电状态发生变化时伴随有晶格弛豫，对应俘获势垒为０．３２ｅＶ．本工作也证明可以把量子点类比深中心进行研究．
The quantum dot electrical properties of InAs self-organized growth have been successfully investigated by deep level transient spectroscopy (DLTS). The ground states of the InAs quantum dots at 2.5 atomic layers are about 0.13eV below the GaAs conduction band, When the state of charge changes with the lattice relaxation, the corresponding capture barrier is 0.32eV. This work also proves that quantum dots can be analogized to deep centers.