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一、引言最近,气体等离子体处理技术进一步发展,正在研究此项技术在大规模集成电路制作工艺中的应用。在 CF_4气体等离子体腐蚀中,硅、多晶硅、二氧化硅这样的硅系化合物,是由通过低温等离子体放电激励的氟原子而进行腐蚀的。这种腐蚀方法具有如下很多优点:(1)与一般的溶液腐蚀完全相同,可以使用光致抗蚀剂作为腐蚀时的保护层。(2)在一定的压力,一定的输出功率下,腐蚀速度是一定值。
I. INTRODUCTION Recently, the gas plasma processing technology has been further developed and the application of this technology in the fabrication of large scale integrated circuits is under study. In CF 4 gas plasma etching, silicon compounds such as silicon, polysilicon, and silicon dioxide are etched by fluorine atoms excited by low-temperature plasma discharge. This etching method has many advantages as follows: (1) It is exactly the same as a general solution etching, and a photoresist can be used as a protective layer during etching. (2) under a certain pressure, a certain output power, the corrosion rate is a certain value.