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通过大量实验,研究了硅片在700℃和20个大气压的水汽中加速氧化后的完整性。全部实验都是采用直径为3吋的片子。对所研究的所有不同氧化层厚度(直到5μm厚),(100)和(111)取向的n型和p型硅的高压水汽氧化都抑制了氧化感生的堆垛层错。将一部分片子在一个标准大气压下进行水汽氧化,使其产生堆垛层错,接着又在高压下进行水汽氧化,以便研究这些堆垛层错的特性。结果表明,高压水汽氧化后,堆垛层错的长度有某种程度的收缩,其收缩量小于仅根据硅的消耗量所预计的值。对高压水汽氧化的样品进行了电容瞬态测量,并与一个大气压下更高温度处理后的片子进行了比较,发现高压水汽氧化后的缺陷态密度与预氧化条件下得到的结果几乎相同。
Through extensive experimentation, the integrity of the silicon wafer after accelerated oxidation in water vapor at 700 ° C and 20 atmospheres was studied. All experiments are using a diameter of 3-inch film. For all of the different oxide thicknesses investigated up to 5 μm thick, the high pressure vapor oxidation of both (100) and (111) -oriented n-type and p-type silicon inhibited oxidation-induced stacking faults. Some of the tablets were subjected to water vapor oxidation at one standard atmospheric pressure to produce stacking faults followed by water vapor oxidation at high pressure in order to study the properties of these stacking faults. The results show that the length of the stacking faults shrinks to a certain extent after high pressure water vapor oxidation, and the shrinkage is less than predicted based on the consumption of silicon alone. Capacitance transient measurements were carried out on high pressure water vaporized samples and compared with a higher temperature treated film at atmospheric pressure. It was found that the defect state density after high pressure water vapor oxidation was almost the same as that obtained under the pre-oxidation condition.