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采用双靶共溅法制备了铜掺杂的碲化铋锑热电薄膜,铜与碲化铋锑共溅的方法有利于形成沿c轴方向择优生长的碲化铋锑薄膜。结果表明,铜原子均匀的掺杂在碲化铋锑薄膜材料中。由于铜原子有利于提高载流子迁移率,薄膜材料的电导率随着铜掺杂比例的提高得到了极大的提升。当铜靶的溅射功率为20 W时,可以得到最高的电导率,同时功率因子的最佳值可提升到20μW/(cm·K2)。
Copper-doped bismuth telluride antimony thermoelectric thin films were prepared by double-target co-sputtering. The co-sputtering of copper and antimony bismuth telluride is favorable for the formation of antimony telluride thin films preferentially grown along the c-axis. The results show that the copper atoms are uniformly doped in antimony bismuth telluride thin film material. Since copper atoms help to improve the carrier mobility, the conductivity of the thin film material with the copper doping ratio has been greatly enhanced. When the copper target sputtering power of 20 W, you can get the highest conductivity, while the best power factor can be increased to 20μW / (cm · K2).