采用磷原子选择性表面掺杂的横向固相非晶硅膜外延

• 作 者: Toru Dan 徐玉辉
• 出 处: 微电子学
• 发表日期: 1989年05期
• 关键词: 磷原子 固相外延 非晶硅 电子显微技术 籽晶 生长速率 有效截面 附加原子 膜厚度 生长模型

本文研究了用磷原子的选择表面掺杂法来作非晶硅(α-Si)膜的横向固相外延(L-SPE),采用这种方法的磷原子仅在α-Si膜的表面层掺杂。已经发现,L-SPE的生长速率和从籽晶区起的生长长度,可由磷原子掺杂层的厚度来改变,但与α-Si膜厚度的关系不大。采用有效截面的透射电子显微技术,还发现,在掺磷样品表面中L-SPE的生长前沿由单晶面组成。为了解释这些实验结果,我们提出了表面掺磷样品的一种L-SPE生长模型。

In this paper, the lateral solid state epitaxy (L-SPE) of amorphous silicon (α-Si) films was investigated by selective surface doping with phosphorous atoms. The phosphorus atoms in this method were only deposited on the surface layer of α-Si films Doping. It has been found that the growth rate of L-SPE and the growth length from the seed region can be changed by the thickness of the doped layer of phosphorus atoms, but has little to do with the thickness of the α-Si film. Transmission electron microscopy with an effective cross-section also found that the growth front of L-SPE in the phosphorus-doped sample surface consisted of a single crystal plane. In order to explain these experimental results, we propose an L-SPE growth model for phosphorus-doped samples.