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研究了用 Ni进行金属诱导横向晶化 ( MIL C)制备大尺寸多晶硅晶粒的结构改进和工艺条件优化 ,改进了MIL C的结构 ,通过在埋层氧化层上开出与衬底相连的籽晶区 ,减少了大晶粒多晶硅中的缺陷分布 ;同时在前人的基础上优化了退火温度及时间 ,用 Secco腐蚀液观察了晶粒大小和间界分布 ,最后得到了质量更好的大晶粒多晶硅 ,其大小在 70～ 80 μm左右 .同时讨论了 MIL C后生成的 Ni Si2 的去除方法 ,成功地去除了高温退火后生成的Ni Si2 ,大大减小了 Ni在多晶硅层中的分布 ,保证了将 MIL C方法成功应用于实现深亚微米器件的研究中
The improvement of the structure and the process conditions for the preparation of large-size polycrystalline silicon grains by metal-induced lateral crystallization (MIL C) of Ni have been studied. The structure of MIL C has been improved. By using seeds grown on the buried oxide layer to expose the substrate Crystal zone, reducing the distribution of defects in large-grained polycrystalline silicon. At the same time, the annealing temperature and time were optimized based on the previous studies. The grain size and interdependence distribution were observed with Secco etching solution. Finally, The size of the crystalline polycrystalline silicon is about 70-80 μm, and the removal of Ni Si2 generated after MIL C is also discussed. The formation of Ni Si2 after high temperature annealing is successfully removed and the distribution of Ni in the polycrystalline silicon layer is greatly reduced , Promised to MIL C method successfully applied to the realization of deep sub-micron device research