Mechanism of amorphous Ge_2Sb_2Te_5 removal during chemical mechanical planarization in acidic H_2O_

• 作 者: 何敖东 宋志棠 刘波 钟旻 王良咏 吕业刚 封松林
• 机 构: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and
• 出 处: Chinese Physics B
• 发表日期: 2013年01期
• 关键词: slurry acidic amorphous immersed slowly subsequent dissolution crystalline collo

In this paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2 . Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.

In was paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly static with the increase in H2O2 concentration. immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.