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采用改进的布里奇曼法生长出尺寸为Φ15 mm×45 mm,外观完整无开裂的Cd Ge As2单晶体。为了提高器件的使用性能,需要对晶体进行表面处理,主要对Cd Ge As2晶片表面的抛光技术进行了研究。通过对解理面切割分析得到(101)晶面,机械抛光后进行了XPS分析。对该晶面采用溴甲醇溶液进行腐蚀抛光,采用XRD回摆及光学显微镜对不同抛光时间的试样进行观测。结果表明,CGA晶体的(101)晶面在常温下采用溴甲醇溶液腐蚀50 s后,晶片表面光滑无划痕,并且具有半峰宽较小的回摆曲线,同时计算得到Cd Ge As2晶体的表面损伤层厚度。
The CdGe As2 single crystals with the size of Φ15 mm × 45 mm and the complete appearance of no cracks were grown by the improved Bridgman method. In order to improve the performance of the device, the surface of the crystal needs to be treated, and the polishing technology of the surface of the CdGeAs2 wafer is mainly studied. The (101) crystal plane was obtained by the cleavage plane cleavage analysis and XPS analysis was performed after mechanical polishing. Bromide methanol solution was used to etch and polish the crystal face. XRD back-swinging and optical microscope were used to observe the samples with different polishing time. The results show that the (101) crystal plane of CGA crystal has a smooth and scratch-free surface after being exposed to bromine methanol solution for 50 s at room temperature, and has a smaller swing angle at half width. In addition, Surface damage layer thickness.