【摘 要】
：
Aluminium nitride (AlN), with much higher thermal conductivity, is considered to be an excellent alteative to the SiO2 layer in traditional silicon-on-insulator
【机 构】
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Institute of Microelectronic Materials, School of Material Science and Engineering, Tongji Universit
论文部分内容阅读
Aluminium nitride (AlN), with much higher thermal conductivity, is considered to be an excellent alteative to the SiO2 layer in traditional silicon-on-insulator (SOI) materials. The silicon-on-aluminium-nitride (SOAN) structure was fabricated by the smart-cut process to alleviate the self-heating effects for traditional SOI. The convergent beam Kikuchi line diffraction patte results show that some rotational misalignment exists when two wafers are bonded, which is about 3°. The high-resolution x-ray diffraction result indicates that, before annealing at high temperature, the residual lattice strain in the top silicon layer is tensile. After annealing at 1100° C for an hour, the strain in the top Si decreases greatly and reverses from tensile to slightly compressive as a result of viscous flow of AlN.
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