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为了寻找适合真空微电子器件的场发射阵列（FEA）覆盖材料，我们采用了一系列功能材料作为覆盖膜，薄膜淀积采用离子束辅助淀积（IBAD）以及其它淀积技术。在10~-6Pa下测量具有不同覆盖膜的硅FEA二极管的I－V特性，测量结果表明除Au和Mo外，其它覆盖材料都对FEA电子发射性能有改进，经TaN覆盖的FEA发射电流最大。由F－N曲线估算出有效表面功函数和有效发射面积，从而说明以上所得的实验结果。
In order to find a field emission array (FEA) covering material suitable for vacuum microelectronic devices, we have adopted a series of functional materials as covering films, thin film deposition using ion beam assisted deposition (IBAD) and other deposition techniques. The I-V characteristics of silicon FEA diodes with different overlay films were measured at 10 ~ -6Pa. The results show that all of the overlay materials have improved FEA electron emission properties except for Au and Mo, and the FEA emission current covered by TaN is the largest . From the F-N curve to estimate the effective surface work function and effective emission area, to illustrate the experimental results obtained above.