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一.电子元器件及生产设备 808nm无铝半导体量子阱高功率激光器及其列阵 该成果采用真空镀膜工艺和合金技术形成激光器两面的电极,光刻和化学腐蚀相结合形成激光器波导条形结构,采用Au/InGaP肖特基势垒进行电流限制,采用电子束蒸发形成激光器前后腔面的高、低反射膜,精细抛光多层金属电镀的铜热沉。该器件既可作为光源,又可作为其他波长的激光
I. Electronic components and production equipment 808nm aluminum-free semiconductor quantum well high-power laser and its array The results of the use of vacuum coating technology and alloy technology to form the electrodes on both sides of the laser, lithography and chemical etching combined to form a laser waveguide strip structure, Using Au / InGaP Schottky barrier for current limiting, electron beam evaporation is used to form high and low reflective films on the cavity front and back surfaces of the laser, and a fine polished multi-layer metal-plated copper heat sink. The device can be used as a light source, but also as a laser of other wavelengths