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铁电存储器(FRAM)的核心技术是铁电晶体材料,这一特殊材料使得铁电存储产品同时拥有随机存取记忆体(RAM)和非易失性存储产品的特性。当我们把电场加载到铁电晶体材料上,晶阵中的中心原子会沿着电场方向运动,到达稳定状态。晶阵中的每个自由浮动的中心原子只有两个稳定状态。一个我们拿来记忆逻辑中的“0”,另一个记忆“1”。中心原子能在常温,没有电场的情况下停留在此状态达一百年以上。铁电记忆体不需要定时刷新,能在断电情况下保存数据。 由于在整个物理过程中没有任何原子碰撞,铁电记忆体(FRAM)拥有高速读写、超低功耗和无限次写入等超级特性。 传统半导体记忆体有易失性记忆体(volatile memory)和非易失性记忆体(non-volatile memory)两大体系,易失性记忆体如SRAM和DRAM,在没有电源的情况下都不能保存数据,但这种存储器拥有高性能、易用等优点。非易失性记忆体如E-
Ferroelectric memory (FRAM) is the core technology of ferroelectric materials, this special material makes the ferroelectric memory products have both random access memory (RAM) and non-volatile storage products. When we load the electric field onto the ferroelectric material, the central atoms in the crystal array move in the direction of the electric field to reach a steady state. Each free-floating central atom in a crystal array has only two stable states. One we used to remember the “0” in logic and the other one “1”. Center atomic energy at room temperature, no electric field stay in this state for more than a century. Ferroelectric memory does not require regular refresh, can save data in case of power failure. Due to the absence of any atomic collisions throughout the physical process, ferroelectric memory (FRAM) has superb features such as high-speed read and write, ultra-low power consumption, and unlimited writes. Conventional semiconductor memories have two systems, volatile memory and non-volatile memory. Volatile memory such as SRAM and DRAM can not be stored in the absence of power Data, but this memory has the advantages of high performance, ease of use. Non-volatile memory such as E-