Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime

• 作 者: 何红宇 郑学仁
• 机 构: Faculty of Physics and Optoelectronic Engineering,Guangdong University of Technology,School of Elect
• 出 处: 半导体学报
• 发表日期: 2011年07期
• 关键词: drain amorphous trapped regime exponential sheet magnetron eliminated Lambert sa

An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the bandgap.Using a charge sheet approximation,the trapped and free charge expressions are calculated,then the surface potential based drain current expression is developed.Moreover,threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression.The calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved.

An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime, assuming an exponential trap states density within the band gap. Using a charge sheet approximation, the trapped and free charge expressions are calculated, then the surface potential based drain current expression is developed. Moreover, threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression. The calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved.