With the progress of ULS1 technology, materials with low dielectric constant are required to replace SiO2 film as the interlayer to scale down the interconnecti
The structural transformation in thin films of bimetals in the dependence on temperature and concentration of vacancies was investigated. The system Ni-Al struc
Introducing the stress distribution near grain boundaries to improve the dislocation pileup model for the Hall-Petch (H-P) relation, the continuous distribution