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采用电化学腐蚀的方法成功地制备了厚膜p型宏孔多孔硅。氢氟酸和二甲基甲酰胺按体积比1:4组成电化学腐蚀的溶液。通过在不同条件下制备的多组样品,得出了多孔硅生长速度与电流密度以及腐蚀厚度与腐蚀时间的函数关系。通过ESEM对所制样品进行了表面和截面形貌分析,得出30mA/cm2～50mA/cm2的阳极电流密度是制备高质量厚膜p型宏孔多孔硅的最佳条件。
The thick film p-type macroporous porous silicon was successfully prepared by electrochemical etching. Hydrofluoric acid and dimethylformamide by volume ratio of 1: 4 electrochemical corrosion solution. The growth rate of porous silicon as a function of the current density, as well as the corrosion thickness and the etching time, were obtained through a series of samples prepared under different conditions. The surface and cross-sectional morphology of the prepared samples were analyzed by ESEM. The results showed that the anode current density of 30mA / cm2 ~ 50mA / cm2 is the best condition for the preparation of p-type macroporous porous silicon with high quality.