【摘 要】
：
We investigate the heat generation Q in a quantum dot (QD),coupled to a normal metal and a superconductor,without electric bias voltage.It is found that Q is qu
【机 构】
：
Department of Physics, Jiujiang University, Jiujiang 332005
论文部分内容阅读
We investigate the heat generation Q in a quantum dot (QD),coupled to a normal metal and a superconductor,without electric bias voltage.It is found that Q is quite sensitive to the lead temperatures TL,R and the superconductor gap magnitude △.At TL,R 《 w0 (w0 is the phonon frequency),the superconductor affects Q only at △ ＜ w0,and the maximum magnitude of negative Q appears at some △ slightly smaller than w0.At elevated lead temperature,contribution to Q from the superconductor arises at △,ranging from less than to much larger than w0.However,the peak value of Q is several times smaller than that in the case of TL,R 《 w0.Interchanging lead temperatures TL and TR leads to quite different Q behaviors,while this makes no difference for a normal-metal-quantum-dot-normal-metal system,and the QD can be cooled much more efficiently when the superconductor is colder.
其他文献
As a member of the inwardly rectifying K+ channel (Kir) family,Kir2.1 allows K+ to influx the cell more easily than to efflux,a biophysical phenomenon named inw
We measure the rotational populations of ultracold 85Rb133Cs molecules in the lowest vibrational ground state by a depletion spectroscopy and quantify the molec
Calmodulin (CaM) is involved in the regulation of a variety of cellular signaling pathways.To accomplish its physiological functions,CaM binds with Ca2+ at its
Negative ion-beam-induced luminescence (IBIL) measurements of a pure LiF crystal using 20keY H-are performed to monitor the formation and annihilation of lumine
A frequency stabilization approach is introduced for the microsecond pulse sodium beacon laser using an intracavity tilt-and temperature-tuned etalon based on a
Measuring the growth parameters of Ge quantum dots(QDs) embedded in SiO_2/Si hetero-structure is prerequisite for developing the optoelectronic devices such as
High-resistivity silicon-on-insulator (HR-SOI) and trap-rich high-resistivity silicon-on-insulator (TR-SOI) substrates have been widely adopted for high-perform
设施西瓜栽培已经成为许多地区农业生产的特色产业。但是,种子萌发和植株生长往往受到多种不良环境条件的影响。为了提高西瓜种子的萌发率,促进保护地栽培西瓜生长,提高产量,