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PIN是电光调制器中常见的一种调制结构,该结构工作时产生的热光效应直接影响着电光调制器的性能。为了缓解这种热光效应对调制器的影响,从PIN调制原理出发,在绝缘体上硅薄膜(SOI)材料的基础上提出了一种波状PIN调制结构,并将该结构与普通PIN调制结构进行对比,定量分析了波状PIN结构对温度、折射率以及调制区载流子浓度的影响,通过仿真得出2V调制电压下,波状PIN结构的温度降低了11.6%,抑制热光效应使得折射率漂移减小了28%,调制区注入载流子浓度提高了26.7%。通过实验,分别制作了波状PIN结构和普通PIN结构的微环电光调制器,经过测试发现波状PIN结构具有更大的谐振峰蓝移值,该结构有效抑制了热光效应的影响,证明了该新型结构的优越性及理论分析的正确性。
PIN is a common modulation structure in electro-optic modulator. The thermo-optic effect generated by the structure directly affects the performance of electro-optic modulator. In order to alleviate the influence of this thermo-optic effect on the modulator, a wavy PIN modulation structure is proposed based on the SOI material based on the principle of PIN modulation, and the structure is compared with the common PIN modulation structure The effects of the wavy PIN structure on the temperature, refractive index and the carrier concentration in the modulation region were quantitatively analyzed. The simulation results show that the temperature of the wavy PIN structure decreases by 11.6% at 2V modulation voltage, and the refractive index drift A decrease of 28%, and an increase of 26.7% of the injected carrier concentration in the modulation area. Through experiments, we have fabricated the micro-loop electro-optic modulator with wave PIN structure and normal PIN structure respectively. After testing, we found that the wave PIN structure has a larger peak blue-shift value of resonant peak, which effectively restrained the effect of thermo-optic effect. The Superiority of New Structure and Correctness of Theoretical Analysis.