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为在WC-Co系硬质合金基面上合成金刚石致密涂膜,采用EACVD法(Electron·Assisted CVD,电子射束CVD法)以牌号ISO—K10硬质合金为基板,基板在金刚石合成前以1μm粒径的金刚石研磨粉研成镜面,再以2～4μm粒径的金刚石研磨粉将镜面研粗。合成室通以CH_4+H_2混合气体,合成室压力为40Torr,CH_4气体浓度为0.5～2%(体积比),基板温度650～950℃,灯丝温度1850℃,电流密度10mA/cm~2,电压150V,反应时间2小
In order to synthesize diamond dense coating on the surface of WC-Co cemented carbide substrate, EACVD method (Electron Assisted CVD, electron beam CVD method) is adopted to make the brand ISO-K10 cemented carbide substrate. Before the diamond synthesis, 1μm particle size of diamond grinding powder into a mirror, and then to 2 ~ 4μm particle size of the diamond grinding powder mirror coarse. The synthesis chamber is supplied with CH4 + H2 gas mixture, the pressure of the synthesis chamber is 40 Torr, the concentration of CH4 gas is 0.5-2% by volume, the substrate temperature is 650-950 DEG C, the filament temperature is 1850 DEG C, the current density is 10mA / cm2, 150V, reaction time 2 small